| PART |
Description |
Maker |
| SUP65P06-20 SUB65P06-20 |
From old datasheet system
P-Channel Enhancement-Mode Trans
P-Channel 60-V (D-S), 175C MOSFET
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,65A I(D),TO-220AB
P-Channel MOSFET
30V N-Channel PowerTrench MOSFET
|
VISAY[Vishay Siliconix]
Vishay Intertechnology Inc
Vishay Intertechnology,Inc.
|
| FDS898407 FDS8984 |
N-Channel PowerTrench? MOSFET
N-Channel PowerTrench庐 MOSFET
N-Channel PowerTrench㈢ MOSFET
N-Channel PowerTrench MOSFET 30V, 7A, 23mOhm 7 A, 30 V, 0.032 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
|
| NTE2946 NTE2944 |
30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET
MOSFET N-Channel, Enhancement Mode High Speed Switch
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| NTE2935 NTE2933 |
30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET
MOSFET N-Channel, Enhancement Mode High Speed Switch
|
NTE[NTE Electronics]
|
| BR1000 BR1010 BR1001 BR1002 BR1004 BR1006 BR1008 |
SILICON BRIDGE RECTIFIERS 硅桥式整流器
MOSFET P-CH 500V 8A TO-247AD
MOSFET P-CH 600V 10A TO-247AD
MOSFET P-CH 500V 7A TO-247AD
MOSFET P-CH 500V 11A TO-247AD
MOSFET N-CH 600V 20A TO-247AD
|
EIC discrete Semiconduc...
Electronics Industry Public Company Limited
EIC[EIC discrete Semiconductors]
|
| SUP85N08-08 SUB85N08-08 |
N-Channel 75-V (D-S) 175 Degree Celcious MOSFET N通道75 - V（下副秘书长175度Celcious MOSFET
N-Channel 75-V (D-S) 175C MOSFET N通道75 - V（下副秘书长75荤MOSFET
N-Channel MOSFET
N-Channel 75-V (D-S) 175C MOSFET
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| IRFZ44NL IRFZ44NS IRFZ44NSTRR IRFZ44NLPBF IRFZ44NS |
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A)
(IRFZ44NL / IRFZ44NS) Power MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 49A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 55V的五（巴西）直| 49A条（丁）|63AB
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFBA90N20DPBF |
95 A, 200 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-273AA
HEXFET㈢Power MOSFET
HEXFET?Power MOSFET
|
International Rectifier
|
| IRLU8743PBF IRLR8743PBF |
160 A, 30 V, 0.0031 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
HEXFET㈢Power MOSFET
HEXFET?Power MOSFET
|
International Rectifier
|
| IRL7833LPBF IRL7833PBF IRL7833SPBF IRL7833STRLPBF |
75 A, 30 V, 0.0038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
HEXFET?Power MOSFET
HEXFET㈢Power MOSFET
|
International Rectifier
|
| AM29LV010B-45RJC AM29LV010B-55JC AM29LV010B-55JE A |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST Package
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
20V Dual N-Bidirectional HEXFET Power MOSFET in a 6-Lead FlipFET
30V N-Channel PowerTrench MOSFET 30VN沟道的PowerTrench MOSFET
-12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package x8闪存EEPROM
1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 3V PROM, 70 ns, PQCC32
x8 Flash EEPROM x8闪存EEPROM
|
Toshiba, Corp.
Advanced Micro Devices, Inc.
Spansion, Inc.
|
| VUM33-05N VUM33-05 IXYSCORP-VUM33-05N |
Power MOSFET Stage for Boost Converters 47 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
Power Factor Correction Modules: MOSFET
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
